MEMS resonators and band-pass
filters with frequencies in the low-UHF range (e.g., 35-300MHz) with
performances that rival those of bulky, off-chip crystal and SAW filters
used in present-day wireless transceivers. By integrating these MEMS devices
together with transistor circuits single-chip RF MEMS front-ends using high-performance
super-heterodyne architectures become possible.
MEMS-based devices for telecommunication application,such as switches, tunable
capacitors and mechanical filters, have been intensively studied since 1998.
Micromechanical RF-switches offer advantages over their solid state counterparts
(FETs and PIN diodes) because of their low drive power requirement, high
isolation and good linearity. Different types of MEMS switches are being
studied by various groups with the designs focussing on two types of switches:
Shunt switches for applications at 10-100 GHz and series switches with a
low ohmic contact for the lower Gigahertz range. The latter have been realized
in different design variations such as bridges, cantilevers and torsional
devices. Typically at 1
GHz an insertion loss of 0.5 dB and an isolation of 15 dB may be achieved.
If you have any questions
or want further information,